High-mobility p-type NiOx thin-film transistors processed at low temperatures with Al2O3 high-k dielectric-Reference-Cited by-同舟云学术

High-mobility p-type NiOx thin-film transistors processed at low temperatures with Al2O3 high-k dielectric

Published:2016 Issue:40 Volume:4 Page:9438-9444
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Shan Fukai¹²³⁴⁵,Liu Ao¹²³⁴⁵,Zhu Huihui⁶⁷²³⁴,Kong Weijin¹²³⁴,Liu Jingquan⁶⁷²³⁴,Shin Byoungchul⁸⁹¹⁰¹¹,Fortunato Elvira¹²¹³¹⁴¹⁵¹⁶^ORCID,Martins Rodrigo¹²¹³¹⁴¹⁵¹⁶,Liu Guoxia¹²³⁴⁵

Affiliation:

1. College of Physics

2. Qingdao University

3. Qingdao 266071

4. China

5. College of Electronic and Information Engineering

6. Lab of New Fiber Materials and Modern Textile

7. Growing Base for State Key Laboratory

8. Electronic Ceramics Center

9. DongEui University

10. Busan 614-714

11. Korea

12. Department of Materials Science/CENIMAT-I3N

13. Faculty of Sciences and Technology

14. New University of Lisbon and CEMOP-UNINOVA

15. Campus de Caparica

16. 2829-516 Caparica

Abstract

High-performance p-type NiO_x thin-film transistors are fabricated via a low-cost solution process and exhibit a high mobility of around 15 cm² V⁻¹ s⁻¹.

Funder

National Natural Science Foundation of China

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2016/TC/C6TC02137A

Reference45 articles.

1. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors

2. Oxide Semiconductor Thin-Film Transistors: A Review of Recent Advances

3. Structure and Morphologic Influence of WO3Nanoparticles on the Electrochromic Performance of Dual-Phasea-WO3/WO3Inkjet Printed Films