Atomic layer deposition of tantalum oxide and tantalum silicate from TaCl5, SiCl4, and O3: growth behaviour and film characteristics-Reference-Cited by-同舟云学术

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Atomic layer deposition of tantalum oxide and tantalum silicate from TaCl5, SiCl4, and O3: growth behaviour and film characteristics

Published:2013 Issue:37 Volume:1 Page:5981
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Han Jeong Hwan,Ungur Elisaveta,Franquet Alexis,Opsomer Karl,Conard Thierry,Moussa Alain,De Gendt Stefan,Van Elshocht Sven,Adelmann Christoph

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2013/TC/C3TC31172D

Reference48 articles.

1. Atomic layer deposition of high capacitance density Ta2O5–ZrO2 based dielectrics for metal–insulator–metal structures

2. Tantalum pentoxide for advanced DRAM applications

3. CVD of Tantalum Oxide Dielectric Thin Films for Nanoscale Device Applications

4. Thin RF sputtered and thermal Ta2O5 on Si for high density DRAM application

5. Preparation and characterization of TaAlOx high-κ dielectric for metal–insulator–metal capacitor applications

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Fabrication of tantalum silicate films with low TCR and low resistivity by magnetron sputtering;Vacuum;2024-08

2. Atomic layer deposited tantalum silicate on crystallographically-oriented epitaxial germanium: interface chemistry and band alignment;Materials Advances;2022

3. Selective ALD of SiN using SiI4 and NH3: The effect of temperature, plasma treatment, and oxide underlayer;Journal of Vacuum Science & Technology A;2020-12

4. In Situ SiO2 Passivation of Epitaxial (100) and (110)InGaAs by Exploiting TaSiOx Atomic Layer Deposition Process;ACS Omega;2018-11-01

5. Atomic Layer Deposition of Ruthenium Thin Films from (Ethylbenzyl) (1-Ethyl-1,4-cyclohexadienyl) Ru: Process Characteristics, Surface Chemistry, and Film Properties;Chemistry of Materials;2017-05-31

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