Current emission from P-doped SiC nanowires with ultralow turn-on fields
Author:
Affiliation:
1. Institute of Materials
2. Ningbo University of Technology
3. Ningbo City
4. P. R. China
Abstract
We reported the current emission from P-doped SiC nanowires with an ultralow turn-on field of 0.47 V μm−1.
Funder
National Natural Science Foundation of China
Publisher
Royal Society of Chemistry (RSC)
Subject
Materials Chemistry,General Chemistry
Link
http://pubs.rsc.org/en/content/articlepdf/2016/TC/C6TC01823H
Reference47 articles.
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5. High-temperature stable field emission of B-doped SiC nanoneedle arrays
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