Large-Scale Growth of Well-Aligned SiC Tower-Like Nanowire Arrays and Their Field Emission Properties
Author:
Affiliation:
1. School of Materials Science and Engineering, University of Science & Technology Beijing, Beijing City, 100083, P.R. China
2. Institute of Materials, Ningbo University of Technology, Ningbo City, 315016, P.R. China
Funder
Ministry of Science and Technology of the People's Republic of China
National Natural Science Foundation of China
Educational Commission of Zhejiang Province
Publisher
American Chemical Society (ACS)
Subject
General Materials Science
Link
https://pubs.acs.org/doi/pdf/10.1021/am506678x
Reference59 articles.
1. A Carbon Nanotube Field-Emission Electron Source
2. Needle-shaped silicon carbide nanowires: Synthesis and field electron emission properties
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5. Status of silicon carbide (SiC) as a wide-bandgap semiconductor for high-temperature applications: A review
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