Solution synthesis and dielectric properties of alumina thin films: understanding the role of the organic additive in film formation-Reference-Cited by-同舟云学术

Solution synthesis and dielectric properties of alumina thin films: understanding the role of the organic additive in film formation

Published:2021 Issue:25 Volume:50 Page:8811-8819
ISSN:1477-9226
Container-title:Dalton Transactions
language:en
Short-container-title:Dalton Trans.

Author:

Hoffmann Rudolf C.¹²³⁴,Liedke Maciej O.⁵⁶⁷⁴,Butterling Maik⁵⁶⁷⁴,Wagner Andreas⁵⁶⁷⁴^ORCID,Trouillet Vanessa⁸⁹¹⁰⁴,Schneider Jörg J.¹²³⁴^ORCID

Affiliation:

1. Eduard-Zintl-Institut für Anorganische und Physikalische Chemie

2. Technische Universität Darmstadt

3. 64287 Darmstadt

4. Germany

5. Institute of Radiation Physics

6. Helmholtz-Zentrum Dresden-Rossendorf

7. 01328 Dresden

8. Institute for Applied Materials (IAM-ESS) and Karlsruhe Nano Micro Facility (KNMF)

9. Karlsruhe Institute of Technology (KIT)

10. 76344 Eggenstein-Leopoldshafen

Abstract

Positron annihilation spectroscopy is used to characterize pore size distributions in alumina thin films. Differences in the microstructure can be correlated to dielectric behaviour and insulating properties.

Funder

Deutsche Forschungsgemeinschaft

Publisher

Royal Society of Chemistry (RSC)

Subject

Inorganic Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2021/DT/D1DT01439K

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1. Precursor Design Strategies for the Low‐Temperature Synthesis of Functional Oxides: It's All in the Chemistry

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4. Unique chemistries of metal-nitrate precursors to form metal-oxide thin films from solution: materials for electronic and energy applications

5. Deep-UV-Enhanced Approach for Low-Temperature Solution Processing of IZO Transistors with High-k AlOx/YAlOx Dielectric