Unique chemistries of metal-nitrate precursors to form metal-oxide thin films from solution: materials for electronic and energy applications-Reference-Cited by-同舟云学术

Unique chemistries of metal-nitrate precursors to form metal-oxide thin films from solution: materials for electronic and energy applications

Published:2019 Issue:42 Volume:7 Page:24124-24149
ISSN:2050-7488
Container-title:Journal of Materials Chemistry A
language:en
Short-container-title:J. Mater. Chem. A

Author:

Cochran Elizabeth A.¹²³⁴⁵^ORCID,Woods Keenan N.¹²³⁴⁵^ORCID,Johnson Darren W.¹²³⁴⁵^ORCID,Page Catherine J.¹²³⁴⁵^ORCID,Boettcher Shannon W.¹²³⁴⁵^ORCID

Affiliation:

1. Department of Chemistry and Biochemistry

2. The Materials Science Institute

3. The Center for Sustainable Materials Chemistry

4. University of Oregon

5. Eugene

Abstract

Unique chemistries of metal-nitrate precursors that enable the preparation of high-quality, high-performance metal-oxide thin films by solution deposition are reviewed.

Funder

Division of Chemistry

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science,Renewable Energy, Sustainability and the Environment,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2019/TA/C9TA07727H

Reference214 articles.

1. Review of recent developments in amorphous oxide semiconductor thin-film transistor devices

2. Solution Processed Metal Oxide High-κ Dielectrics for Emerging Transistors and Circuits

3. Oxide Semiconductor Thin-Film Transistors: A Review of Recent Advances

4. n-Type doped transparent conducting binary oxides: an overview

5. Recent developments in the emerging field of crystalline p-type transparent conducting oxide thin films

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