The optimization effect of titanium on the phase change properties of SnSb4 thin films for phase change memory applications-Reference-Cited by-同舟云学术

The optimization effect of titanium on the phase change properties of SnSb4 thin films for phase change memory applications

Author:

Zhao Zihan¹²³⁴⁵,Hua Sicong¹²³⁴⁵,Su Xiao¹²³⁴⁵,Shen Bo¹²³⁴⁵^ORCID,Song Sannian⁶⁷⁸⁵,Song Zhitang⁶⁷⁸⁵,Wu Weihua¹²³⁴⁵^ORCID,Zhai Jiwei¹²³⁴⁵^ORCID

Affiliation:

1. Shanghai Key Laboratory for R&D and Application of Metallic Functional Materials

2. School of Materials Science & Engineering

3. Tongji University

4. Shanghai 201804

5. People's Republic of China

6. State Key Laboratory of Functional Materials for Informatics

7. Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences

8. Shanghai 200050

Abstract

Titanium-doped SnSb₄ phase-change thin film has been experimentally investigated for phase-change random access memory (PCRAM) use.

Funder

National Natural Science Foundation of China

Science and Technology Commission of Shanghai Municipality

Publisher

Royal Society of Chemistry (RSC)

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Link

Reference32 articles.

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