High performance white-light-controlled resistance switching memory of an Ag/α-Fe2O3/FTO thin film-Reference-Cited by-同舟云学术

High performance white-light-controlled resistance switching memory of an Ag/α-Fe2O3/FTO thin film

Published:2016 Issue:30 Volume:6 Page:25028-25033
ISSN:2046-2069
Container-title:RSC Advances
language:en
Short-container-title:RSC Adv.

Author:

Tang Mei¹²³⁴⁵,Sun Bai¹²³⁴⁵,Huang Jing¹²³⁴⁵,Gao Ju¹²³⁴⁵,Li Chang Ming¹²³⁴⁵

Affiliation:

1. Institute for Clean Energy & Advanced Materials

2. Southwest University

3. Chongqing 400715

4. China

5. Faculty of Materials and Energy

Abstract

A white-light-controlled resistance switching memory device based on an Ag/α-Fe₂O₃/FTO structure, made by growing an α-Fe₂O₃ nanorod array on FTO, shows high performance with an OFF/ON ratio of ∼10⁴ and exceptional stability at room temperature.

Funder

National Natural Science Foundation of China

Publisher

Royal Society of Chemistry (RSC)

Subject

General Chemical Engineering,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2016/RA/C5RA24057C

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1. Low-cost and nanoscale non-volatile memory concept for future silicon chips

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