Study on Raman scattering spectroscopy of Mn-doped GaN grown by the ammonothermal method-Reference-Cited by-同舟云学术

Study on Raman scattering spectroscopy of Mn-doped GaN grown by the ammonothermal method

Published:2024 Issue:16 Volume:26 Page:2166-2171
ISSN:1466-8033
Container-title:CrystEngComm
language:en
Short-container-title:CrystEngComm

Author:

Lu Wenhao¹²,Li Tengkun³^ORCID,Ren Guoqiang¹²,Xia Zhenghui²,Xie Kaihe²,Li Shaozhe²,Shen Liangkun²,Xu Ke¹²³⁴

Affiliation:

1. School of Nano-Tech and Nano-Bionics, University of Science and Technology of China, Hefei 230026, Anhui, China

2. Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, Jiangsu, China

3. Suzhou Laboratory, Suzhou 215123, Jiangsu, China

4. Shenyang National Laboratory for Materials Science, Jiangsu Institute of Advanced Semiconductors, NW-20, Nanopolis Suzhou, 99 Jinji Lake Avenue, Suzhou 215123, Jiangsu, China

Abstract

Mn-doped GaN crystals of a-plane and (11−22) plane were grown by the ammonothermal method.

Funder

National Key Research and Development Program of China

National Natural Science Foundation of China

Jiangsu Provincial Key Research and Development Program

Publisher

Royal Society of Chemistry (RSC)

Link

http://pubs.rsc.org/en/content/articlepdf/2024/CE/D4CE00093E

Reference33 articles.

1. GaN: Processing, defects, and devices

2. A Comprehensive Review of Recent Progress on GaN High Electron Mobility Transistors: Devices, Fabrication and Reliability

3. GaN Power Devices – Current Status and Future Directions

4. Resistivity of manganese doped GaN grown by near equilibrium ammonothermal (NEAT) method

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