Bilayer insulator tunnel barriers for graphene-based vertical hot-electron transistors
Author:
Affiliation:
1. KTH Royal Institute of Technology
2. School of Information and Communication Technology
3. 16440 Kista, Sweden
4. University of Siegen
5. 57076 Siegen, Germany
6. IHP
7. 15236 Frankfurt (Oder), Germany
Abstract
Bilayer dielectric tunnel barriers in graphene-based electron injection tunnel diodes show high tunneling current densities due to step tunneling.
Publisher
Royal Society of Chemistry (RSC)
Subject
General Materials Science
Link
http://pubs.rsc.org/en/content/articlepdf/2015/NR/C5NR03002A
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