Variable-temperature activation energy extraction to clarify the physical and chemical mechanisms of the resistive switching process-Reference-Cited by-同舟云学术

Variable-temperature activation energy extraction to clarify the physical and chemical mechanisms of the resistive switching process

Published:2020 Issue:29 Volume:12 Page:15721-15724
ISSN:2040-3364
Container-title:Nanoscale
language:en
Short-container-title:Nanoscale

Author:

Li Lei¹²³⁴⁵^ORCID,Chang Kuan-Chang¹²³⁴⁵^ORCID,Lin Xinnan¹²³⁴⁵,Lai Ying-Chih⁶⁷⁸⁹¹⁰,Zhang Rui¹²³⁴⁵,Kuo Tze-Peng¹¹¹²¹³¹⁰¹⁴

Affiliation:

1. School of Electronic and Computer Engineering

2. Peking University

3. Shenzhen Graduate School

4. Shenzhen 518055

5. China

6. Department of Materials Science and Engineering

7. Research Center for Sustainable Energy and Nanotechnology

8. National Chung Hsing University

9. Taichung 40227

10. Taiwan

11. Department of Physics

12. National Sun Yat-sen University

13. Kaohsiung 804

14. Institute of Materials and Optoelectronics

Abstract

The activation energy extraction approach illuminates the physical and chemical reaction mechanisms during the resistive switching process that consists of five phases.

Funder

Natural Science Foundation of Guangdong Province

Science, Technology and Innovation Commission of Shenzhen Municipality

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science

Link

http://pubs.rsc.org/en/content/articlepdf/2020/NR/D0NR04053C

Reference26 articles.

1. Controllable Growth of Nanoscale Conductive Filaments in Solid-Electrolyte-Based ReRAM by Using a Metal Nanocrystal Covered Bottom Electrode

2. Resistive switching characteristics in HfOx layer by using current sweep mode

3. Dual Ion Effect of the Lithium Silicate Resistance Random Access Memory

4. Direct Observation of Conversion Between Threshold Switching and Memory Switching Induced by Conductive Filament Morphology

5. Resistance random access memory

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