Extending growth inhibition during area-selective atomic layer deposition of Al2O3 on aminosilane-functionalized SiO2-Reference-Cited by-同舟云学术

Extending growth inhibition during area-selective atomic layer deposition of Al₂O₃ on aminosilane-functionalized SiO₂

Published:2022 Issue:46 Volume:58 Page:6650-6652
ISSN:1359-7345
Container-title:Chemical Communications
language:en
Short-container-title:Chem. Commun.

Author:

Xu Wanxing¹^ORCID,Lemaire Paul C.²,Sharma Kashish²,Hausmann Dennis M.²,Agarwal Sumit¹^ORCID

Affiliation:

1. Department of Chemical and Biological Engineering, Colorado School of Mines, Golden, Colorado 80401, USA

2. Lam Research Corporation, 11155 SW Leveton Drive, Tualatin, Oregon 97062, USA

Abstract

Nucleation during area-selective ALD can be significantly delayed by using a lower reactivity precursor at reduced dose.

Funder

Lam Research Corporation

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,General Chemistry,Ceramics and Composites,Electronic, Optical and Magnetic Materials,Catalysis

Link

http://pubs.rsc.org/en/content/articlepdf/2022/CC/D2CC01967A

Reference20 articles.

1. Perspective: New process technologies required for future devices and scaling

2. Preface: Materials, metrology, and modeling for a future beyond CMOS technology

3. The use of atomic layer deposition in advanced nanopatterning

4. A brief review of atomic layer deposition: from fundamentals to applications

5. Crystallinity of inorganic films grown by atomic layer deposition: Overview and general trends

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