High-mobility transparent amorphous metal oxide/nanostructure composite thin film transistors with enhanced-current paths for potential high-speed flexible electronics-Reference-Cited by-同舟云学术

High-mobility transparent amorphous metal oxide/nanostructure composite thin film transistors with enhanced-current paths for potential high-speed flexible electronics

Published:2014 Issue:7 Volume:2 Page:1201-1208
ISSN:2050-7526
Container-title:J. Mater. Chem. C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Xingqiang Liu,Jinshui Miao,Lei Liao,Weida Hu

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2014/TC/C3TC31705F

Reference94 articles.

1. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors

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4. Amorphous Oxide Semiconductors for High-Performance Flexible Thin-Film Transistors

5. Bottom-Gate Gallium Indium Zinc Oxide Thin-Film Transistor Array for High-Resolution AMOLED Display

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