Bending-strain-induced localized density of states in amorphous indium-gallium-zinc-oxide thin-film transistors-Reference-Cited by-同舟云学术

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Bending-strain-induced localized density of states in amorphous indium-gallium-zinc-oxide thin-film transistors

Published:2018-08 Issue: Volume:120 Page:60-66
ISSN:0749-6036
Container-title:Superlattices and Microstructures
language:en
Short-container-title:Superlattices and Microstructures

Author:

Woo Sola,Kim Minsuk,Oh Hyungon,Cho Kyoungah,Kim Sangsig

Funder

National Research Foundation of Korea

Korean government (MSIP)

Brain Korea 21 Plus Project

Samsung Display Co., Ltd

Ministry of Trade, Industry & Energy (MOTIE, Korea

Industrial Strategic Technology Development Program

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science

Reference32 articles.

1. Flexible displays: TFT technology: substrate options and TFT processing strategies;Sarma,2012

2. Oxide versus LTPS TFTs for active-matrix displays;Mativenga;SID Symp. Dig. Tech. Pap.,2014

3. Origins of high mobility and low operation voltage of amorphous oxide TFTs: electronic structure, electron transport, defects and doping;Kamiya;J. Disp. Technol.,2009

4. Oxide-TFT technologies for next-generation AMOLED displays;Arai;J. Soc. Inf. Disp.,2012

5. Polysilicon TFT technology for active matrix OLED displays;Stewart;IEEE Trans. Electron. Dev.,2001

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1. Electronic properties of Ga-In-Zn-O (GIZO) thin films: Effect of post-annealing;Journal of Electron Spectroscopy and Related Phenomena;2019-07

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