Constructing a correlation between ferroelectricity and grain sizes in Hf0.5Zr0.5O2 ferroelectric thin films
Author:
Affiliation:
1. State Key Laboratory of Powder Metallurgy, Central South University, Changsha, 410083, China
2. College of Chemistry and Chemical Engineering, Central South University, Changsha, 410083, China
Abstract
Funder
National Natural Science Foundation of China
State Key Laboratory of Powder Metallurgy
National Key Research and Development Program of China
Publisher
Royal Society of Chemistry (RSC)
Subject
Condensed Matter Physics,General Materials Science,General Chemistry
Link
http://pubs.rsc.org/en/content/articlepdf/2022/CE/D1CE01626A
Reference46 articles.
1. Ferroelectricity in hafnium oxide thin films
2. Ferroelectric HfO2-based materials for next-generation ferroelectric memories
3. Growth of (111)-oriented epitaxial and textured ferroelectric Y-doped HfO2 films for downscaled devices
4. Ferroelectric FETs With 20-nm-Thick HfO2Layer for Large Memory Window and High Performance
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