Laser molecular beam epitaxy of vertically self-assembled GaN nanorods on Ta metal foil: role of growth temperature and laser repetition rate
Author:
Affiliation:
1. CSIR-National Physical Laboratory
2. Dr. K. S. Krishnan Marg
3. New Delhi 110012
4. India
5. Academy of Scientific and Innovative Research (AcSIR)
6. Solid State Physics Laboratory
7. New Delhi 110054
Abstract
Self-aligned GaN nanorod assembly directly grown on metal foil substrates is very attractive for developing flexible devices.
Publisher
Royal Society of Chemistry (RSC)
Subject
Condensed Matter Physics,General Materials Science,General Chemistry
Link
http://pubs.rsc.org/en/content/articlepdf/2019/CE/C9CE00855A
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4. Ultraviolet photodetector based on single GaN nanorod p–n junctions
5. Optical and Field Emission Properties of Thin Single-Crystalline GaN Nanowires
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