Controlled growth of GaN nanorods directly on flexible Mo metal foil by laser molecular beam epitaxy-Reference-Cited by-同舟云学术

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Controlled growth of GaN nanorods directly on flexible Mo metal foil by laser molecular beam epitaxy

Published:2020-06 Issue: Volume:111 Page:104988
ISSN:1369-8001
Container-title:Materials Science in Semiconductor Processing
language:en
Short-container-title:Materials Science in Semiconductor Processing

Author:

Ramesh Ch.,Tyagi P.,Gautam S.,Ojha S.,Gupta G.,Kumar M. Senthil,Kushvaha S.S.

Funder

CSIR-NPL

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference39 articles.

1. Review of recent progress of III-nitride nanowire lasers;Arafin;J. Nanophotonics,2013

2. III-nitride NWs on unconventional substrates: from materials to optoelectronic device applications;Zhao;Prog. Quant. Electron.,2018

3. Unleashing the potential of molecular beam epitaxy grown AlGaN-based ultraviolet-spectrum NWs devices;Min;J. Nanophotonics,2018

4. GaN based nanorods for solid state lighting;Li;J. Appl. Phys.,2012

5. Field-emission and photo-detection characteristics of laser molecular beam epitaxy grown homoepitaxial GaN nanowall networks;Tyagi;Mater. Sci. Semicond. Process.,2019

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1. Fabrication strategies of flexible light sources based on micro/nano III-nitride LEDs;Journal of Information Display;2024-01-02

2. Contemporary innovations in two-dimensional transition metal dichalcogenide-based P–N junctions for optoelectronics;Nanoscale;2024

3. Heterojunction Bi₂Se₃/Sb₂Se₃ on Flexible Mo Metal Foils for Photoelectrochemical Water Splitting Applications;ACS Applied Electronic Materials;2023-09-01

4. Growth of III-nitrides by molecular beam epitaxy: Unconventional substrates for conventional semiconductors;Materials Science and Engineering: B;2023-09

5. A review of the synthesis, properties, and applications of 2D transition metal dichalcogenides and their heterostructures;Materials Chemistry and Physics;2023-03

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