Carrier dynamics at trench defects in InGaN/GaN quantum wells revealed by time-resolved cathodoluminescence-Reference-Cited by-同舟云学术

Carrier dynamics at trench defects in InGaN/GaN quantum wells revealed by time-resolved cathodoluminescence

Published:2022 Issue:2 Volume:14 Page:402-409
ISSN:2040-3364
Container-title:Nanoscale
language:en
Short-container-title:Nanoscale

Author:

Kusch Gunnar¹^ORCID,Comish Ella J.¹,Loeto Kagiso¹,Hammersley Simon²³,Kappers Menno J.¹,Dawson Phil¹,Oliver Rachel A.¹,Massabuau Fabien C.-P.¹⁴^ORCID

Affiliation:

1. Department of Materials Science and Metallurgy, University of Cambridge, Cambridge CB3 0FS, UK

2. Photon Science Institute, Department of Electrical and Electronic Engineering, School of Engineering, The University of Manchester, Manchester, M13 9PL, UK

3. Poro Technologies Ltd, Sawston, CB22 3JH, UK

4. Department of Physics, SUPA, University of Strathclyde, Glasgow G4 0NG, UK

Abstract

Time-resolved cathodoluminescence is an emerging tool to investigate carrier recombination mechanisms at defects in semiconductors – here applied to trench defects in InGaN quantum wells.

Funder

Engineering and Physical Sciences Research Council

Royal Microscopical Society

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science

Link

http://pubs.rsc.org/en/content/articlepdf/2022/NR/D1NR06088K

Reference47 articles.

1. Background story of the invention of efficient blue InGaN light emitting diodes (Nobel Lecture)

2. The 2018 GaN power electronics roadmap