Pit assisted oxygen chemisorption on GaN surfaces-Reference-Cited by-同舟云学术

Pit assisted oxygen chemisorption on GaN surfaces

Published:2015 Issue:23 Volume:17 Page:15201-15208
ISSN:1463-9076
Container-title:Physical Chemistry Chemical Physics
language:en
Short-container-title:Phys. Chem. Chem. Phys.

Author:

Mishra Monu¹²³⁴⁵,Krishna T. C. Shibin¹²³⁴⁵,Aggarwal Neha¹²³⁴⁵,Kaur Mandeep⁶³⁴,Singh Sandeep⁷³⁴,Gupta Govind¹²³⁴⁵

Affiliation:

1. Surface Physics and Nanostructure Heteroepitaxy

2. Physics of Energy Harvesting Division

3. New Delhi-110012

4. India

5. Academy of Scientific and Innovative Research (AcSIR)

6. Quantum Phenomena and Applications

7. Sophisticated and Analytical Instrumentation

Abstract

We correlate the oxygen chemisorption on GaN films having a structure with pits. The surface pits acted as favourable sites for oxygen chemisorption due to their favourable energetics, which resulted in significant changes in the electronic properties and energy band structure.

Publisher

Royal Society of Chemistry (RSC)

Subject

Physical and Theoretical Chemistry,General Physics and Astronomy

Link

http://pubs.rsc.org/en/content/articlepdf/2015/CP/C5CP00540J

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