Influence of band bending and polarization on the valence band offset measured by x-ray photoelectron spectroscopy
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3408777
Reference24 articles.
1. Determination of the valence band offset of wurtzite InN∕ZnO heterojunction by x-ray photoelectron spectroscopy
2. Band-offset trends in nitride heterojunctions
3. Precise Determination of the Valence-Band Edge in X-Ray Photoemission Spectra: Application to Measurement of Semiconductor Interface Potentials
4. Valence‐band discontinuity between GaN and AlN measured by x‐ray photoemission spectroscopy
5. Valence band offset of InN∕AlN heterojunctions measured by x-ray photoelectron spectroscopy
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