Band offsets of (100) β-(AlxGa1−x)2O3/β-Ga2O3 heterointerfaces grown via MOCVD
Author:
Affiliation:
1. Department of Electrical and Computer Engineering, The Ohio State University, Columbus, Ohio 43210, USA
2. Department of Materials Science and Engineering, The Ohio State University, Columbus, Ohio 43210, USA
Funder
NSF
Air Force Office of Scientific Research
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/am-pdf/10.1063/5.0031584
Reference51 articles.
1. Guest Editorial: The dawn of gallium oxide microelectronics
2. Polymorphism of Ga2O3 and the System Ga2O3—H2O
3. Gallium oxide (Ga2O3) metal-semiconductor field-effect transistors on single-crystal β-Ga2O3 (010) substrates
4. MOCVD homoepitaxy of Si-doped (010) β-Ga2O3 thin films with superior transport properties
5. Low temperature electron mobility exceeding 104 cm2/V s in MOCVD grown β-Ga2O3
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