Advancement toward ultra-thick and bright InGaN/GaN structures with a high number of QWs-Reference-Cited by-同舟云学术

Advancement toward ultra-thick and bright InGaN/GaN structures with a high number of QWs

Published:2019 Issue:2 Volume:21 Page:356-362
ISSN:1466-8033
Container-title:CrystEngComm
language:en
Short-container-title:CrystEngComm

Author:

Hubáček Tomáš¹²³⁴⁵^ORCID,Hospodková Alice¹²³,Kuldová Karla¹²³^ORCID,Oswald Jiří¹²³,Pangrác Jiří¹²³,Jarý Vitězslav¹²³,Dominec Filip¹²³,Slavická Zíková Markéta¹²³,Hájek František¹²³,Hulicius Eduard¹²³,Vetushka Alexej¹²³,Ledoux Gilles⁶⁷⁸,Dujardin Christophe⁶⁷⁸^ORCID,Nikl Martin¹²³

Affiliation:

1. Institute of Physics CAS

2. Prague 6

3. Czech Republic

4. Faculty of Mechatronics

5. Informatics and Interdisciplinary Studies

6. Institut Lumière Matière

7. UMR55306 Université Claude Bernard, Lyon 1-CNRS

8. France

Abstract

InGaN/GaN structures are studied as potential candidates for superfast scintillation detectors and show the leading decay time of around 1 ns and intense luminescence.

Funder

Grantová Agentura České Republiky

Ministerstvo Školství, Mládeže a Tělovýchovy

H2020 Spreading Excellence and Widening Participation

Technical University of Liberec

Publisher

Royal Society of Chemistry (RSC)

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2019/CE/C8CE01830H

Reference28 articles.