Laser doping of 2D material for precise energy band design

Author:

Tan Xiang12,Wang Shu1,Zhang Qiaoxuan3,He Juxing1,Chen Shengyao14,Qu Yusong1,Liu Zhenzhou15,Tang Yong3,Liu Xintong3,Wang Cong6,Wang Quan2ORCID,Liu Qian14ORCID

Affiliation:

1. CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology & University of Chinese Academy of Sciences, Beijing 100190, China

2. Zhenjiang key laboratory of advanced sensing materials and devices, Jiangsu University, Zhenjiang 212013, PR China

3. Hebei University of Water Resources and Electric Engineering Electrical Automation Department, 061001, Cangzhou, Hebei, China

4. MOE Key Laboratory of Weak-Light Nonlinear Photonics, TEDA Applied Physics Institute, School of Physics, Nankai University, Tianjin 300457, China

5. School of Physical Science and Technology, Inner Mongolia University, Inner Mongolia 010000, China

6. College of Mathematics and Physics, Beijing University of Chemical Technology, Beijing, 100029, China

Abstract

The excellent 2D materials are finite for optoelectrical devices including transistors, diodes, sensors, and so on, thus modulation of the 2D materials is important to improve the performance of the current eligible 2D materials.

Funder

National Natural Science Foundation of China

National Key Research and Development Program of China

Chinese Academy of Sciences

Seventh Framework Programme

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science

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