Van der Waals gap engineering in 2D materials for energy storage and conversion
Author:
Funder
National Key Technologies R&D Program of China
National Natural Science Foundation of China
the Fundamental Research Funds for the Central Universities and the 111 Project
Publisher
Springer Science and Business Media LLC
Link
https://link.springer.com/content/pdf/10.1007/s12598-024-02817-3.pdf
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5. Dong Y, Zhang S, Du X, Hong S, Zhao SN, Chen YX, Chen XH, Song HH. Boosting the electrical double-layer capacitance of graphene by self-doped defects through ball-milling. Adv Funct Mater. 2019;29(24):1901127. https://doi.org/10.1002/adfm.201901127.
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