Lithium ion assisted hydration of metal ions in non-aqueous sol–gel inks for high performance metal oxide thin-film transistors
Author:
Affiliation:
1. Department of Materials Science and Engineering
2. Yonsei University
3. Seoul 120-749
4. Republic of Korea
5. Research Institute of Iron and Steel Technology
6. Department of BioNano Technology
7. Gachon University
8. Gyeonggi
Abstract
Enhanced hydration lowers the dehydroxylation temperature of the sol–gel inks, resulting in high-performance metal oxide thin film transistors.
Publisher
Royal Society of Chemistry (RSC)
Subject
Materials Chemistry,General Chemistry
Link
http://pubs.rsc.org/en/content/articlepdf/2015/TC/C5TC00341E
Reference30 articles.
1. Structural and Electrical Properties of Solution-Processed Gallium-Doped Indium Oxide Thin-Film Transistors
2. Investigating addition effect of hafnium in InZnO thin film transistors using a solution process
3. Novel ZrInZnO Thin-film Transistor with Excellent Stability
4. Role of Alkaline-Earth Metal in Solution-Processed Indium Oxide Based Thin-Film Transistors
5. Low-Temperature, High-Performance Solution-Processed Thin-Film Transistors with Peroxo-Zirconium Oxide Dielectric
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