Low-Temperature, High-Performance Solution-Processed Thin-Film Transistors with Peroxo-Zirconium Oxide Dielectric
Author:
Affiliation:
1. Department of Materials Science and Engineering, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul, 120-749, Korea.
Publisher
American Chemical Society (ACS)
Subject
General Materials Science
Link
https://pubs.acs.org/doi/pdf/10.1021/am3022625
Reference44 articles.
1. Low-temperature, high-performance solution-processed metal oxide thin-film transistors formed by a ‘sol–gel on chip’ process
2. Low-temperature fabrication of high-performance metal oxide thin-film electronics via combustion processing
3. Low-Temperature, Aqueous-Solution-Processed Zinc Tin Oxide Thin Film Transistor
4. Aqueous Inorganic Inks for Low-Temperature Fabrication of ZnO TFTs
5. Formation Mechanism of Solution-Processed Nanocrystalline InGaZnO Thin Film as Active Channel Layer in Thin-Film Transistor
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