Surface chemistry in atomic layer deposition of AlN thin films from Al(CH3)3 and NH3 studied by mass spectrometry
Author:
Affiliation:
1. Department of Physics, Chemistry and Biology, Linköping University, SE-581 83, Linköping, Sweden
2. Seco Tools AB, SE-737 82, Fagersta, Sweden
Abstract
Funder
Stiftelsen för Strategisk Forskning
Publisher
Royal Society of Chemistry (RSC)
Link
http://pubs.rsc.org/en/content/articlepdf/2024/TC/D4TC01867B
Reference17 articles.
1. Comparison of plasma-enhanced atomic layer deposition AlN films prepared with different plasma sources
2. Piezoelectric properties and residual stress of sputtered AlN thin films for MEMS applications
3. Properties of AlN grown by plasma enhanced atomic layer deposition
4. Synthesis and characterization of 10 nm thick piezoelectric AlN films with high c-axis orientation for miniaturized nanoelectromechanical devices
5. Synthesis, Characterization, and Reaction of Aluminum Halide Amides Supported by a Bulky β-Diketiminato Ligand
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