Polymer–carbon dot hybrid structure for a self-rectifying memory device by energy level offset and doping-Reference-Cited by-同舟云学术

Polymer–carbon dot hybrid structure for a self-rectifying memory device by energy level offset and doping

Published:2018 Issue:25 Volume:8 Page:13917-13920
ISSN:2046-2069
Container-title:RSC Advances
language:en
Short-container-title:RSC Adv.

Author:

Lu Hang¹²³⁴⁵,Chen Yingying¹²³⁴⁵,Chang Qing¹²³⁴⁵,Cheng Shuai¹²³⁴⁵,Ding Yamei¹²³⁴⁵,Chen Jie¹²³⁴⁵,Xiu Fei¹²³⁴⁵,Wang Xiangjing¹²³⁴⁵,Ban Chaoyi¹²³⁴⁵,Liu Zhengdong¹²³⁴⁵,Liu Juqing¹²³⁴⁵^ORCID,Huang Wei¹²³⁴⁵

Affiliation:

1. Key Laboratory of Flexible Electronics (KLOFE)

2. Institute of Advanced Materials (IAM)

3. Jiangsu National Synergistic Innovation Center for Advanced Materials (SICAM)

4. Nanjing Tech University (NanjingTech)

5. Nanjing 211816

Abstract

A strategy for self-rectifying memory diodes based on a polymer–carbon dot hybrid structure, with a configuration of rGO/PEDOT : PSS/carbon dots/MEH-PPV/Al, has been proposed.

Funder

Natural Science Foundation of Jiangsu Province

National Natural Science Foundation of China

Publisher

Royal Society of Chemistry (RSC)

Subject

General Chemical Engineering,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2018/RA/C8RA01928B

Reference35 articles.

1. Current switching of resistive states in magnetoresistive manganites

2. Nanoionics-based resistive switching memories