Reversible Resistive Switching and Multilevel Recording in La0.7Sr0.3MnO3 Thin Films for Low Cost Nonvolatile Memories
Author:
Affiliation:
1. Institut de Ciència de Materials de Barcelona, CSIC, Campus de la UAB, 08193-Bellaterra, Spain
2. Helmholtz-Zentrum-Berlin, Albert-Einstein-Strasse 15, D-12489, Berlin, Germany
Publisher
American Chemical Society (ACS)
Subject
Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering
Link
https://pubs.acs.org/doi/pdf/10.1021/nl1008162
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1. Low‐Frequency Negative Resistance in Thin Anodic Oxide Films
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5. CMOS Compatible Nanoscale Nonvolatile Resistance Switching Memory
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