A room-temperature near-infrared photodetector based on a MoS2/CdTe p–n heterojunction with a broadband response up to 1700 nm-Reference-Cited by-同舟云学术

A room-temperature near-infrared photodetector based on a MoS2/CdTe p–n heterojunction with a broadband response up to 1700 nm

Published:2018 Issue:18 Volume:6 Page:4861-4865
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Wang Yuange¹²³⁴,Huang Xiaowen⁵⁶⁷⁸,Wu Di¹²³⁴^ORCID,Zhuo Ranran¹²³⁴,Wu Enping¹²³⁴,Jia Cheng¹²³⁴,Shi Zhifeng¹²³⁴^ORCID,Xu Tingting¹²³⁴,Tian Yongtao¹²³⁴,Li Xinjian¹²³⁴

Affiliation:

1. School of Physics and Engineering, and Key Laboratory of Material Physics of Ministry of Education

2. Zhengzhou University

3. Zhengzhou

4. P. R. China

5. Department of Applied Physics and Materials Research Center

6. The Hong Kong Polytechnic University

7. Kowloon

8. China

Abstract

High-performance room-temperature infrared photodetectors based on MoS₂/CdTe p–n heterojunction with broadband response, high responsivity, specific detectivity as well as fast response speed were demonstrated.

Funder

China Postdoctoral Science Foundation

National Natural Science Foundation of China

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2018/TC/C8TC01237G

Reference41 articles.

1. Highly polarization sensitive infrared photodetector based on black phosphorus-on-WSe 2 photogate vertical heterostructure

2. Layered-material WS2/topological insulator Bi2Te3heterostructure photodetector with ultrahigh responsivity in the range from 370 to 1550 nm