Ultra-broadband and high response of the Bi2Te3–Si heterojunction and its application as a photodetector at room temperature in harsh working environments-Reference-Cited by-同舟云学术

Ultra-broadband and high response of the Bi2Te3–Si heterojunction and its application as a photodetector at room temperature in harsh working environments

Published:2015 Issue:29 Volume:7 Page:12535-12541
ISSN:2040-3364
Container-title:Nanoscale
language:en
Short-container-title:Nanoscale

Author:

Yao Jiandong¹²³⁴⁵,Shao Jianmei¹²³⁴⁵,Wang Yingxin⁶⁷⁸⁹,Zhao Ziran⁶⁷⁸⁹,Yang Guowei¹²³⁴⁵

Affiliation:

1. State Key Laboratory of Optoelectronic Materials and Technologies

2. Nanotechnology Research Center

3. School of Physics & Engineering

4. Sun Yat-sen University

5. Guangzhou 510275, P. R. China

6. Key Laboratory of Particle & Radiation Imaging (Tsinghua University) of Ministry of Education

7. Department of Engineering Physics

8. Tsinghua University

9. Beijing 100084, P. R. China

Abstract

Here, we report a vertically-constructed ultra-broadband photodetector based on a TI Bi₂Te₃–Si heterostructure.

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science

Link

http://pubs.rsc.org/en/content/articlepdf/2015/NR/C5NR02953H

Reference40 articles.

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5. Fine Structure Constant Defines Visual Transparency of Graphene

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