All-Layered 2D Optoelectronics: A High-Performance UV-vis-NIR Broadband SnSe Photodetector with Bi2 Te3 Topological Insulator Electrodes-Reference-Cited by-同舟云学术

All-Layered 2D Optoelectronics: A High-Performance UV-vis-NIR Broadband SnSe Photodetector with Bi2 Te3 Topological Insulator Electrodes

Published:2017-07-10 Issue:33 Volume:27 Page:1701823
ISSN:1616-301X
Container-title:Advanced Functional Materials
language:en
Short-container-title:Adv. Funct. Mater.

Author:

Yao Jiandong¹,Zheng Zhaoqiang¹,Yang Guowei¹^ORCID

Affiliation:

1. State Key Laboratory of Optoelectronic Materials and Technologies; Nanotechnology Research Center; School of Materials Science and Engineering; School of Physics; Sun Yat-sen University; Guangzhou Guangdong 510275 P. R. China

Funder

National Natural Science Foundation of China

Publisher

Wiley

Subject

Electrochemistry,Condensed Matter Physics,Biomaterials,Electronic, Optical and Magnetic Materials

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/adfm.201701823/fullpdf

Reference66 articles.

1. Silicon-based broadband antenna for high responsivity and polarization-insensitive photodetection at telecommunication wavelengths

2. Graphene–MoS2 hybrid structures for multifunctional photoresponsive memory devices

3. 3D Computational Imaging with Single-Pixel Detectors

4. An Innovative Postdeposition Annealing Approach Producing Centimeter-Scale In2O3/In2(TeO3)3Bulk Heterojunction Thin Film for Room-Temperature Persistent Photoconductivity

5. Self-powered multifunctional UV and IR photodetector as an artificial electronic eye

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