Discovery of a metastable van der Waals semiconductor <i>via</i> polymorphic crystallization of an amorphous film-Reference-Cited by-同舟云学术

Discovery of a metastable van der Waals semiconductor via polymorphic crystallization of an amorphous film

Published:2023 Issue:6 Volume:10 Page:2254-2261
ISSN:2051-6347
Container-title:Materials Horizons
language:en
Short-container-title:Mater. Horiz.

Author:

Saito Yuta¹^ORCID,Hatayama Shogo¹^ORCID,Chang Wen Hsin¹^ORCID,Okada Naoya¹^ORCID,Irisawa Toshifumi¹^ORCID,Uesugi Fumihiko²^ORCID,Takeguchi Masaki²^ORCID,Sutou Yuji³⁴^ORCID,Fons Paul¹⁵^ORCID

Affiliation:

1. Device Technology Research Institute, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba Central 2, 1-1-1 Umezono, Tsukuba, 305-8568, Japan

2. Electron Microscopy Analysis Station, National Institute for Materials Science (NIMS), 1-2-1 Sengen, Tsukuba, 305-0047, Japan

3. Department of Materials Science, Graduate School of Engineering, Tohoku University, 6-6-11 Aoba-yama, Sendai, 980-8579, Japan

4. Advanced Institute for Materials Research (AIMR), Tohoku University, 2-1-1 Katahira, Sendai, 980-8577, Japan

5. Department of Electronics and Electrical Engineering, Faculty of Science and Technology, Keio University, 3-14-1 Hiyoshi, Kohoku-ku, Yokohama, 223-8522, Japan

Abstract

Here, we report on the growth of GeTe2 thin films, a metastable phase. The GeTe2 film was found to be a semiconductor with a layered structure.

Funder

Japan Society for the Promotion of Science

National Institute of Information and Communications Technology

Publisher

Royal Society of Chemistry (RSC)

Subject

Electrical and Electronic Engineering,Process Chemistry and Technology,Mechanics of Materials,General Materials Science

Link

http://pubs.rsc.org/en/content/articlepdf/2023/MH/D2MH01449A

Reference32 articles.