Large-area, continuous and high electrical performances of bilayer to few layers MoS2 fabricated by RF sputtering via post-deposition annealing method-Reference-Cited by-同舟云学术

Large-area, continuous and high electrical performances of bilayer to few layers MoS2 fabricated by RF sputtering via post-deposition annealing method

Published:2016-08 Issue:1 Volume:6 Page:
ISSN:2045-2322
Container-title:Scientific Reports
language:en
Short-container-title:Sci Rep

Author:

Hussain Sajjad,Singh Jai,Vikraman Dhanasekaran,Singh Arun Kumar,Iqbal Muhammad Zahir,Khan Muhammad Farooq,Kumar Pushpendra,Choi Dong-Chul,Song Wooseok,An Ki-Seok,Eom Jonghwa,Lee Wan-Gyu,Jung Jongwan

Publisher

Springer Science and Business Media LLC

Subject

Multidisciplinary

Link

http://www.nature.com/articles/srep30791.pdf

Reference60 articles.

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2. Wang, H. et al. Integrated circuits based on bilayer MoS2 transistors. Nano letters 12, 4674–4680 (2012).

3. Lee, H.-J., Kim, E., Yook, J.-G. & Jung, J. Intrinsic characteristics of transmission line of graphenes at microwave frequencies. Applied Physics Letters 100, 223102 (2012).

4. Roy, K. et al. Graphene-MoS2 hybrid structures for multifunctional photoresponsive memory devices. Nat Nanotechnol 8, 826–830 (2013).

5. Bao, W., Cai, X., Kim, D., Sridhara, K. & Fuhrer, M. S. High mobility ambipolar MoS2 field-effect transistors: Substrate and dielectric effects. Applied Physics Letters 102, 042104 (2013).

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