Gate-tunable and high optoelectronic performance in multilayer WSe2 P–N diode
Author:
Affiliation:
1. School of Materials and Energy
2. Guangdong University of Technology
3. Guangzhou
4. China
5. State Key Laboratory for Superlattices and Microstructures
Abstract
A high-performance WSe2 P–N junction with rectifying ratio of 105, VOC of ∼0.8 V and EQE of ∼90% is demonstrated.
Funder
National Natural Science Foundation of China
Guangdong University of Technology
Publisher
Royal Society of Chemistry (RSC)
Subject
Materials Chemistry,General Chemistry
Link
http://pubs.rsc.org/en/content/articlepdf/2018/TC/C8TC04295K
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