Stabilization of GaAs photoanodes by in situ deposition of nickel-borate surface catalysts as hole trapping sites-Reference-Cited by-同舟云学术

Stabilization of GaAs photoanodes by in situ deposition of nickel-borate surface catalysts as hole trapping sites

Published:2019 Issue:3 Volume:3 Page:814-822
ISSN:2398-4902
Container-title:Sustainable Energy & Fuels
language:en
Short-container-title:Sustainable Energy Fuels

Author:

Jiang Chaoran¹²³⁴⁵^ORCID,Wu Jiang⁶³⁴⁷⁸^ORCID,Moniz Savio J. A.¹²³⁴,Guo Daqian⁶³⁴,Tang Mingchu⁶³⁴^ORCID,Jiang Qi⁶³⁴,Chen Siming⁶³⁴^ORCID,Liu Huiyun⁶³⁴^ORCID,Wang Aiqin⁵⁹¹⁰¹¹¹²^ORCID,Zhang Tao⁵⁹¹⁰¹¹¹²,Tang Junwang¹²³⁴^ORCID

Affiliation:

1. Department of Chemical Engineering

2. University College London

3. London

4. UK

5. State Key Laboratory of Catalysis

6. Department of Electronic & Electrical Engineering

7. Institute of Fundamental and Frontier Science

8. University of Electronic Science and Technology of China

9. Dalian Institute of Chemical Physics

10. Chinese Academy of Sciences

11. Dalian

12. China

Abstract

A nanocomposite Ni–B/Ga(As)Ox/GaAs photoanode fabricated by combining molecular beam epitaxy with in situ photoassisted electrodeposition enables efficient and stable photoelectrochemical water splitting.

Funder

Engineering and Physical Sciences Research Council

Leverhulme Trust

China Scholarship Council

Publisher

Royal Society of Chemistry (RSC)

Subject

Energy Engineering and Power Technology,Fuel Technology,Renewable Energy, Sustainability and the Environment

Link

http://pubs.rsc.org/en/content/articlepdf/2019/SE/C8SE00265G

Reference27 articles.

1. The other half of the equation