III−V Nitride Epilayers for Photoelectrochemical Water Splitting: GaPN and GaAsPN-Reference-Cited by-同舟云学术

III−V Nitride Epilayers for Photoelectrochemical Water Splitting: GaPN and GaAsPN

Published:2006-12-01 Issue:50 Volume:110 Page:25297-25307
ISSN:1520-6106
Container-title:The Journal of Physical Chemistry B
language:en
Short-container-title:J. Phys. Chem. B

Author:

Deutsch Todd G.¹,Koval Carl A.¹,Turner John A.¹

Affiliation:

1. National Renewable Energy Laboratory, 1617 Cole Boulevard, Golden, Colorado 80401 and Department of Chemistry & Biochemistry, University of Colorado, 215 UCB, Boulder, Colorado 80309

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,Surfaces, Coatings and Films,Physical and Theoretical Chemistry

Link

https://pubs.acs.org/doi/pdf/10.1021/jp0652805

Reference35 articles.

1. Displacement of the Bandedges of GaInP2 in Aqueous Electrolytes Induced by Surface Modification

2. Electrochemical Investigation of the Gallium Nitride‐Aqueous Electrolyte Interface

3. Band-Edge Potentials of n-Type and p-Type GaN

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