A systematic study on effects of precursors and solvents for optimization of solution-processed oxide semiconductor thin-film transistors
Author:
Affiliation:
1. Program in Nano Science and Technology
2. Graduate School of Convergence Science and Technology
3. Seoul National University
4. Seoul 08826
5. Republic of Korea
Abstract
Here we report a systematic study on the effects of precursors and solvents in solution-processed oxide semiconductor thin film transistors.
Funder
National Research Foundation of Korea
Publisher
Royal Society of Chemistry (RSC)
Subject
Materials Chemistry,General Chemistry
Link
http://pubs.rsc.org/en/content/articlepdf/2017/TC/C7TC01779K
Reference30 articles.
1. Oxide Semiconductor Thin-Film Transistors: A Review of Recent Advances
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3. Patterning of Flexible Transparent Thin-Film Transistors with Solution-Processed ZnO Using the Binary Solvent Mixture
4. Amorphous IZO TTFTs with saturation mobilities exceeding 100 cm2/Vs
5. Thin-Film Transistor Fabricated in Single-Crystalline Transparent Oxide Semiconductor
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