Space charge polarization-induced symmetrical negative resistive switching in individual p-type GeSe2:Bi superstructure nanobelts for non-volatile memory-Reference-Cited by-同舟云学术

Space charge polarization-induced symmetrical negative resistive switching in individual p-type GeSe2:Bi superstructure nanobelts for non-volatile memory

Published:2015 Issue:20 Volume:3 Page:5207-5213
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Cao Minghui¹²³⁴⁵,Cheng Baochang¹²³⁴⁵,Xiao Li¹²³⁴,Zhao Jie¹²³⁴,Su Xiaohui⁵⁶²³⁴,Xiao Yanhe¹²³⁴,Lei Shuijin¹²³⁴

Affiliation:

1. School of Materials Science and Engineering

2. Nanchang University

3. Jiangxi 330031

4. P. R. China

5. Nanoscale Science and Technology Laboratory

6. Institute for Advanced Study

Abstract

Two-terminal devices based on p-type GeSe₂:Bi nanobelts show excellent symmetrical nonvolatile negative resistive switching memory behavior, originating from trap-induced space charge polarization effect.

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2015/TC/C5TC00451A

Reference52 articles.

1. A unified model for unipolar resistive random access memory

2. Bipolar and unipolar resistive switching behaviors of sol–gel-derived SrTiO3thin films with different compliance currents

3. Bipolar resistive switching characteristics of Al-doped zinc tin oxide for nonvolatile memory applications

4. Reliability analysis of the low resistance state stability of Ge0.3Se0.7 based solid electrolyte nonvolatile memory cells

5. Resistance switching of an individual Ag2S/Ag nanowire heterostructure

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