The impact of thickness-related grain boundary migration on hole concentration and mobility of p-type transparent conducting CuI films-Reference-Cited by-同舟云学术

The impact of thickness-related grain boundary migration on hole concentration and mobility of p-type transparent conducting CuI films

Published:2024 Issue:13 Volume:14 Page:9072-9079
ISSN:2046-2069
Container-title:RSC Advances
language:en
Short-container-title:RSC Adv.

Author:

Xue Ruibin¹^ORCID,Gao Gang¹^ORCID,Yang Lei²,Xu Liangge¹^ORCID,Zhang Yumin¹^ORCID,Zhu Jiaqi¹³⁴^ORCID

Affiliation:

1. National Key Laboratory of Science and Technology on Advanced Composites in Special Environments, Harbin Institute of Technology, Harbin 150080, P. R. China

2. Center of Analysis Measurement, Harbin Institute of Technology, Harbin 150001, P. R. China

3. Zhengzhou Research Institute, Harbin Institute of Technology, Zhengzhou 450046, P. R. China

4. Key Laboratory of Micro-systems and Micro-structures Manufacturing Ministry of Education, Harbin Institute of Technology, Harbin 150080, P. R. China

Abstract

This work highlights the importance of controlling grain boundary migration during film growth for hole transport in CuI films.

Funder

Key Programme

National Youth Science Foundation

Publisher

Royal Society of Chemistry (RSC)

Link

http://pubs.rsc.org/en/content/articlepdf/2024/RA/D4RA00704B

Reference63 articles.

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2. How we made the IGZO transistor

3. Hole mobility modulation of solution-processed nickel oxide thin-film transistor based on high-k dielectric

4. p-channel thin-film transistor using p-type oxide semiconductor, SnO

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