Hole mobility modulation of solution-processed nickel oxide thin-film transistor based on high-k dielectric-Reference-Cited by-同舟云学术

Hole mobility modulation of solution-processed nickel oxide thin-film transistor based on high-k dielectric

Published:2016-06-06 Issue:23 Volume:108 Page:233506
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Liu Ao¹²³,Liu Guoxia¹²³,Zhu Huihui¹²³,Shin Byoungchul⁴,Fortunato Elvira⁵,Martins Rodrigo⁵,Shan Fukai¹²³

Affiliation:

1. College of Physics, Qingdao University, Qingdao 266071, China

2. College of Electronics and Information Engineering, Qingdao University, Qingdao 266071, China

3. Lab of New Fiber Materials and Modern Textile, Growing Base for State Key Laboratory, Qingdao University, Qingdao 266071, China

4. Electronic Ceramics Center, DongEui University, Busan 614-714, South Korea

5. Department of Materials Science/CENIMAT-I3N, Faculty of Sciences and Technology, New University of Lisbon and CEMOP-UNINOVA, Campus de Caparica, 2829-516 Caparica, Portugal

Funder

National Natural Science Foundation of China (NSFC)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4953460

Reference38 articles.

1. Oxide Semiconductor Thin-Film Transistors: A Review of Recent Advances

2. Study of the Hole Transport Processes in Solution-Processed Layers of the Wide Bandgap Semiconductor Copper(I) Thiocyanate (CuSCN)

3. Recyclable, Flexible, Low-Power Oxide Electronics

4. p-Channel Oxide Thin Film Transistors Using Solution-Processed Copper Oxide

5. Solution-Processed Nickel Oxide Hole Transport Layers in High Efficiency Polymer Photovoltaic Cells

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