Obvious ferroelectricity in undoped HfO2 films by chemical solution deposition-Reference-Cited by-同舟云学术

Obvious ferroelectricity in undoped HfO2 films by chemical solution deposition

Published:2020 Issue:8 Volume:8 Page:2820-2826
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Chen Haiyan¹²³,Chen Yonghong¹²³,Tang Lin¹²³,Luo Hang¹²³⁴²,Zhou Kechao¹²³,Yuan Xi¹²³,Zhang Dou¹²³^ORCID

Affiliation:

1. State Key Laboratory of Powder Metallurgy

2. Central South University

3. China

4. College of Chemistry and Chemical Engineering

Abstract

Although great achievements have been made in realizing ferroelectricity in HfO₂-based films by the ALD method, the performance is strongly constrained by film thickness and dopant types.

Funder

National Natural Science Foundation of China

China Postdoctoral Science Foundation

Central South University

State Key Laboratory of Powder Metallurgy

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2020/TC/C9TC06400A

Reference41 articles.

1. Ferroelectricity in hafnium oxide thin films

2. Thermodynamic Stability of High-K Dielectric Metal Oxides ZrO2 and HfO2 in Contact with Si and SiO2

3. Hafnia and hafnia-toughened ceramics

4. Incipient Ferroelectricity in Al-Doped HfO2 Thin Films

5. Lanthanum-Doped Hafnium Oxide: A Robust Ferroelectric Material

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