Improved switching characteristics of p-type tin monoxide field-effect transistors through Schottky energy barrier engineering-Reference-Cited by-同舟云学术

Improved switching characteristics of p-type tin monoxide field-effect transistors through Schottky energy barrier engineering

Published:2020 Issue:1 Volume:8 Page:201-208
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Kim Taikyu¹²³⁴^ORCID,Kim Jeong-Kyu⁵⁶⁴^ORCID,Yoo Baekeun¹²³⁴^ORCID,Xu Hongwei¹²³⁴^ORCID,Yim Sungyeon¹²³⁴^ORCID,Kim Seung-Hwan⁵⁶⁴^ORCID,Yu Hyun-Yong⁵⁶⁴^ORCID,Jeong Jae Kyeong¹²³⁴^ORCID

Affiliation:

1. Department of Electronic Engineering

2. Hanyang University

3. Seoul 04763

4. Korea

5. School of Electrical Engineering, Korea University

6. Seoul 02841

Abstract

Metal–interlayer–semiconductor contact reduces metal-induced gap states, mitigating Fermi-level pinning at metal/semiconductor interface. Here, switching property of p-type SnO FET is enhanced by increasing electron Schottky barrier at off-state.

Funder

Samsung

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2020/TC/C9TC04345D

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