Defect evolution behaviors from single sulfur point vacancies to line vacancies in monolayer molybdenum disulfide-Reference-Cited by-同舟云学术

Defect evolution behaviors from single sulfur point vacancies to line vacancies in monolayer molybdenum disulfide

Published:2021 Issue:35 Volume:23 Page:19525-19536
ISSN:1463-9076
Container-title:Physical Chemistry Chemical Physics
language:en
Short-container-title:Phys. Chem. Chem. Phys.

Author:

Gao Chan¹²^ORCID,Yang Xiaoyong³,Jiang Ming¹,Chen Lixin¹,Chen Zhiwen¹,Singh Chandra Veer¹⁴^ORCID

Affiliation:

1. Department of Materials Science and Engineering, University of Toronto, Toronto, ON M5S 3E4, Canada

2. Institute of Nuclear Physics and Chemistry, China Academy of Engineering Physics, Mianyang 621900, China

3. Condensed Matter Theory Group, Materials Theory Division, Department of Physics and Astronomy, Uppsala University, Uppsala 75120, Sweden

4. Department of Mechanical and Industrial Engineering, University of Toronto, Toronto, ON M5S 3G8, Canada

Abstract

Defect evolution from single sulfur point vacancies to line vacancies and the effect of defect evolution on the mechanical and electronic properties in monolayer molybdenum disulfide.

Funder

Natural Sciences and Engineering Research Council of Canada

University of Toronto

National Natural Science Foundation of China

Publisher

Royal Society of Chemistry (RSC)

Subject

Physical and Theoretical Chemistry,General Physics and Astronomy

Link

http://pubs.rsc.org/en/content/articlepdf/2021/CP/D1CP02852A

Reference44 articles.

1. Electronics and optoelectronics of two-dimensional transition metal dichalcogenides

2. Effect of intrinsic structural defects on mechanical properties of single layer MoS2

3. Detailed Atomic Reconstruction of Extended Line Defects in Monolayer MoS2

4. Defect Dynamics in 2-D MoS2 Probed by Using Machine Learning, Atomistic Simulations, and High-Resolution Microscopy

5. Defect engineering of two-dimensional transition metal dichalcogenides

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