Deciphering Vacancy Defect Evolution of 2D MoS<sub>2</sub> for Reliable Transistors-Reference-Cited by-同舟云学术

Deciphering Vacancy Defect Evolution of 2D MoS₂ for Reliable Transistors

Published:2023-08-05 Issue:32 Volume:15 Page:38603-38611
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Gao Li¹,Zhang Xiankun¹,Yu Huihui¹,Hong Mengyu¹,Wei Xiaofu¹,Chen Zhangyi¹,Zhang Qinghua²,Liao Qingliang¹³,Zhang Zheng¹³^ORCID,Zhang Yue¹³^ORCID

Affiliation:

1. Academy for Advanced Interdisciplinary Science and Technology, Beijing Advanced Innovation Center for Materials Genome Engineering, University of Science and Technology Beijing, Beijing 100083, People’s Republic of China

2. Collaborative Innovation Center of Quantum Matter, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics Chinese Academy of Sciences, Beijing 100190, People’s Republic of China

3. Beijing Key Laboratory for Advanced Energy Materials and Technologies, School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083, People’s Republic of China

Funder

China Association for Science and Technology

National Key Research and Development Program of China

Overseas Expertise Introduction Center for Discipline Innovation of Food Nutrition and Human Health (111 Center)

Fundamental Research Funds for the Central Universities

National Natural Science Foundation of China

Beijing Nova Program

University of Science and Technology Beijing

Publisher

American Chemical Society (ACS)

Subject

General Materials Science