Detailed Atomic Reconstruction of Extended Line Defects in Monolayer MoS2
Author:
Affiliation:
1. Department of Materials, University of Oxford, Parks Road, Oxford OX1 3PH, United Kingdom
2. Department of Materials Science and Engineering, Seoul National University, 151-742 Seoul, South Korea
Publisher
American Chemical Society (ACS)
Subject
General Physics and Astronomy,General Engineering,General Materials Science
Link
https://pubs.acs.org/doi/pdf/10.1021/acsnano.6b01673
Reference38 articles.
1. Single-layer MoS2 transistors
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5. A Mixed-Solvent Strategy for Efficient Exfoliation of Inorganic Graphene Analogues
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