Understanding the role of carboxylic acid surfactants in the growth inhibition effect during area-selective atomic layer deposition: the case of ZnO growth on Cu and Cu<sub>2</sub>O-Reference-Cited by-同舟云学术

Understanding the role of carboxylic acid surfactants in the growth inhibition effect during area-selective atomic layer deposition: the case of ZnO growth on Cu and Cu₂O

Published:2024 Issue: Volume: Page:
ISSN:1463-9076
Container-title:Physical Chemistry Chemical Physics
language:en
Short-container-title:Phys. Chem. Chem. Phys.

Author:

López-González L. E.¹^ORCID,Ponce-Pérez R.¹,Tiznado H.¹,Guerrero-Sánchez J.¹^ORCID

Affiliation:

1. Centro de Nanociencias y Nanotecnología, Universidad Nacional Autónoma de México, Ensenada, BC 22860, Mexico

Abstract

We report the adsorption of acetic acid (AA) as a model for carboxylic acid self-assembled monolayers on Cu and Cu2O (111) surfaces and the effect of diethyl zinc (DEZ) on its adsorption geometry on Cu2O using quantum chemical calculations.

Funder

Instituto Potosino de Investigación Científica y Tecnológica

Benemérita Universidad Autónoma de Puebla

Dirección General de Asuntos del Personal Académico, Universidad Nacional Autónoma de México

Consejo Nacional de Humanidades, Ciencias y Tecnologías

Publisher

Royal Society of Chemistry (RSC)

Link

http://pubs.rsc.org/en/content/articlepdf/2024/CP/D4CP03117B

Reference45 articles.

1. Understanding the impact of Cu surface pre-treatment on Octadecanethiol-derived self-assembled monolayer as a mask for area-selective deposition

2. Computational Investigation of Precursor Blocking during Area-Selective Atomic Layer Deposition Using Aniline as a Small-Molecule Inhibitor

3. Substrate-Dependent Study of Chain Orientation and Order in Alkylphosphonic Acid Self-Assembled Monolayers for ALD Blocking

4. Inherent substrate-dependent growth initiation and selective-area atomic layer deposition of TiO2 using “water-free” metal-halide/metal alkoxide reactants

5. High‐Throughput Area‐Selective Spatial Atomic Layer Deposition of SiO₂ with Interleaved Small Molecule Inhibitors and Integrated Back‐Etch Correction for Low Defectivity