Electron migration behavior of Au/Cu multilayer films on Si substrates under UV radiation
Author:
Affiliation:
1. Department of Chemistry
2. Tsinghua University
3. Beijing 100084
4. China
5. Institute for Advanced Materials and Technology
6. University of Science and Technology Beijing
7. Beijing 100083
Abstract
The interfacial broadening was caused by an increase of defects in Au/Cu films which was induced by UV radiation.
Publisher
Royal Society of Chemistry (RSC)
Subject
Physical and Theoretical Chemistry,General Physics and Astronomy
Link
http://pubs.rsc.org/en/content/articlepdf/2015/CP/C4CP04124K
Reference43 articles.
1. RBS study of diffusion under strong centrifugal force in bimetallic Au/Cu thin films
2. Direct observations of rapid diffusion of Cu in Au thin films using in situ x-ray diffraction
3. Nonvolatile Memory Effect in a Au/Cu–ZnO/p-Si Type of Metal–Insulator–Semiconductor Structure
4. Thin film annealing and alloying of a Au/Cu two-layer system studied by positron annihilation spectroscopy
5. The Characteristic of the Multilayer Thin Films by X-Ray Reflectometry Method
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