Rapid and Reliable Formation of Highly Densified Bilayer Oxide Dielectrics on Silicon Substrates via DUV Photoactivation for Low-Voltage Solution-Processed Oxide Thin-Film Transistors-Reference-Cited by-同舟云学术

Rapid and Reliable Formation of Highly Densified Bilayer Oxide Dielectrics on Silicon Substrates via DUV Photoactivation for Low-Voltage Solution-Processed Oxide Thin-Film Transistors

Published:2021-01-06 Issue:2 Volume:13 Page:2820-2828
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Lee Won-June¹,Choi Jun-Gyu¹,Sung Sujin¹,Kim Chang-Hyun²^ORCID,Na Sekwon³,Joo Young-Chang³^ORCID,Park Sungjun⁴,Yoon Myung-Han¹^ORCID

Affiliation:

1. School of Materials Science and Engineering, Gwangju Institute of Science and Technology, Gwangju 61005, Republic of Korea

2. Department of Electronic Engineering, Gachon University, Seongnam 13120, Republic of Korea

3. Department of Materials Science and Engineering, Seoul National University, Seoul 08826, Republic of Korea

4. Electrical and Computer Engineering, Ajou University, Suwon 16499, Republic of Korea

Funder

Samsung

National Research Foundation of Korea

Gwangju Institute of Science and Technology

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.0c18118

Reference54 articles.

1. Oxide Semiconductor Thin-Film Transistors: A Review of Recent Advances

2. Metal oxides for optoelectronic applications

3. A Review of Low‐Temperature Solution‐Processed Metal Oxide Thin‐Film Transistors for Flexible Electronics

4. Transparent oxide optoelectronics

5. Transparent Oxide Electronics

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