Hafnium–zirconium oxide interface models with a semiconductor and metal for ferroelectric devices-Reference-Cited by-同舟云学术

Hafnium–zirconium oxide interface models with a semiconductor and metal for ferroelectric devices

Published:2021 Issue:16 Volume:3 Page:4750-4755
ISSN:2516-0230
Container-title:Nanoscale Advances
language:en
Short-container-title:Nanoscale Adv.

Author:

Chae Kisung¹²³⁴⁵^ORCID,Kummel Andrew C.¹²³⁴,Cho Kyeongjae⁵⁶⁷⁴^ORCID

Affiliation:

1. Department of Chemistry and Biochemistry

2. University of California San Diego

3. La Jolla

4. USA

5. Department of Materials Science and Engineering

6. The University of Texas at Dallas

7. Richardson

Abstract

In MIM devices (left), internal field is small in contrast to MIS FeFETs (right) consistent with high MIM endurance due to electrostatic interactions between dielectric and ferroelectric layers.

Funder

Semiconductor Research Corporation

National Research Foundation of Korea

Publisher

Royal Society of Chemistry (RSC)

Subject

General Engineering,General Materials Science,General Chemistry,Atomic and Molecular Physics, and Optics,Bioengineering

Link

http://pubs.rsc.org/en/content/articlepdf/2021/NA/D1NA00230A

Reference31 articles.

1. The future of ferroelectric field-effect transistor technology

2. Ferroelectricity in Simple Binary ZrO2 and HfO2

3. The origin of ferroelectricity in Hf1−xZrxO2: A computational investigation and a surface energy model

4. Large ferroelectric polarization of TiN/Hf0.5Zr0.5O2/TiN capacitors due to stress-induced crystallization at low thermal budget

5. Understanding the formation of the metastable ferroelectric phase in hafnia–zirconia solid solution thin films

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1. First‐Principles Calculation of Basic Properties of Rhombohedral Hafnium Oxide with Space Group R3;physica status solidi (b);2024-06-08

2. Material, Device and Circuit-Compatible Modeling of Ferroelectric Devices;IEEE Nanotechnology Magazine;2023-08

3. Remote Oxygen Scavenging of the Interfacial Oxide Layer in Ferroelectric Hafnium–Zirconium Oxide-Based Metal–Oxide–Semiconductor Structures;ACS Applied Materials & Interfaces;2022-09-19

4. Local Epitaxial Templating Effects in Ferroelectric and Antiferroelectric ZrO₂;ACS Applied Materials & Interfaces;2022-08-05

5. Correction: Hafnium–zirconium oxide interface models with a semiconductor and metal for ferroelectric devices;Nanoscale Advances;2021